[PDF.42ty] Fundamentals of Bias Temperature Instability in MOS Transistors: Characterization Methods, Process and Materials Impact, DC and AC Modeling (Springer Series in Advanced Microelectronics)
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Fundamentals of Bias Temperature Instability in MOS Transistors: Characterization Methods, Process and Materials Impact, DC and AC Modeling (Springer Series in Advanced Microelectronics)
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[PDF.wp29] Fundamentals of Bias Temperature Instability in MOS Transistors: Characterization Methods, Process and Materials Impact, DC and AC Modeling (Springer Series in Advanced Microelectronics)
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| #3412324 in Books | 2015-08-06 | Original language:English | PDF # 1 | 9.47 x.78 x6.22l,.0 | File type: PDF | 269 pages||||“The authors provide insights on the broad values and fundamentals of device level bias temperature instability and technical applications in this book. … a valuable addition to a scientific library, as well as served as good introduction for dev
This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characteriz...
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